Modeling Crack Patterns by Modified STIT Tessellations
Random planar tessellations are presented which are generated by subsequent division of their polygonal cells. The purpose is to develop parametric models for crack patterns appearing at length scales which can change by orders of magnitude in areas such as nanotechnology, materials science, soft ma...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Slovenian Society for Stereology and Quantitative Image Analysis
2020-04-01
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| Series: | Image Analysis and Stereology |
| Subjects: | |
| Online Access: | https://www.ias-iss.org/ojs/IAS/article/view/2245 |