Excellent low-field magnetoresistance effect in Ga-doped MnZn ferrites
An excellent low field magnetoresistance (LFMR) property was achieved from the Ga-doped (Mn0.8Zn0.2)Fe2O4 (MnZn) ferrites at room temperature (RT). For this study, undoped and Ga-doped MnZn ferrites with the nominal compositions of (Mn0.8Zn0.2)1−xGaxFe2O4 (x = 0 ∼ 0.1) were prepared by...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4905446 |