Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits
Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction-bipolar-transis...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2016-06-01
|
| Series: | Engineering Science and Technology, an International Journal |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2215098615300902 |