Non-perturbative four-wave mixing in InSb with intense off-resonant multi-THz pulses

High-field multi-THz pulses are employed to analyze the coherent nonlinear response of the narrow-gap semiconductor InSb which is driven off-resonantly. Field-resolved four-wave mixing signals manifest the onset of a non-perturbative regime of Rabi flopping at external amplitudes above 5 MV/cm per p...

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Bibliographic Details
Main Authors: Huber R., Schubert O., Pashkin A., Mährlein S., Schmidt C., Junginger F., Mayer B., Leitenstorfer A.
Format: Article
Language:English
Published: EDP Sciences 2013-03-01
Series:EPJ Web of Conferences
Online Access:http://dx.doi.org/10.1051/epjconf/20134104004