Non-perturbative four-wave mixing in InSb with intense off-resonant multi-THz pulses
High-field multi-THz pulses are employed to analyze the coherent nonlinear response of the narrow-gap semiconductor InSb which is driven off-resonantly. Field-resolved four-wave mixing signals manifest the onset of a non-perturbative regime of Rabi flopping at external amplitudes above 5 MV/cm per p...
Main Authors: | , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
EDP Sciences
2013-03-01
|
Series: | EPJ Web of Conferences |
Online Access: | http://dx.doi.org/10.1051/epjconf/20134104004 |