Distribution of D1 dislocation luminescence centers in Si+-implanted silicon and the photoluminescence model

Distribution of D1 dislocation luminescence centers in Si+-implanted silicon and the photoluminescence model

Using step-by-step removal of silicon layers, in which dislocation-related photoluminescence is observed after Si+ (100 keV, 1·1015 cm−2) ion implantation followed by high-temperature annealing in a chlorine containing atmosphere, it has been found that a majority of dislocation-related centers of l...

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Bibliographic Details
Main Authors: Sergeyi N. Nagornykh, Vladimir I. Pavlenkov, David I. Tetelbaum, Aleksey N. Mikhaiylov, Aleksey I. Belov, Dmitry S. Korolev, Andrey N. Shushunov, Aleksandr I. Bobrov, Dmitry A. Pavlov, Elena I. Shek
Format: Article
Language:English
Published: Pensoft Publishers 2015-06-01
Series:Modern Electronic Materials
Subjects:
Silicon
Ion implantation
Dislocations
Dislocation luminescence
Photoluminescence model
Online Access:http://www.sciencedirect.com/science/article/pii/S2452177915000122

Internet

http://www.sciencedirect.com/science/article/pii/S2452177915000122

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