Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes
In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are pres...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5010241 |