Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are pres...

Full description

Bibliographic Details
Main Authors: Muhammad Usman, Kiran Saba, Dong-Pyo Han, Nazeer Muhammad, Shabieh Farwa, Rafique Muhammad, Tanzila Saba
Format: Article
Language:English
Published: AIP Publishing LLC 2018-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5010241
id doaj-c6b279dc55014674bfceb1761820f019
record_format Article
spelling doaj-c6b279dc55014674bfceb1761820f0192020-11-25T00:23:29ZengAIP Publishing LLCAIP Advances2158-32262018-01-0181015005015005-610.1063/1.5010241005801ADVDegradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodesMuhammad Usman0Kiran Saba1Dong-Pyo Han2Nazeer Muhammad3Shabieh Farwa4Rafique Muhammad5Tanzila Saba6Department of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Swabi 23640, PakistanDepartment of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Swabi 23640, PakistanFaculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanDepartment of Mathematics, COMSATS Institute of Information Technology, 47040 Wah Cantt, PakistanDepartment of Mathematics, COMSATS Institute of Information Technology, 47040 Wah Cantt, PakistanDepartment of Mathematics, COMSATS Institute of Information Technology, 47040 Wah Cantt, PakistanCollege of Computer and Information Sciences, Prince Sultan University, Riyadh 11586, Saudi ArabiaIn this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are presented. The degradation effect of the built-in polarization field on the IQE of vertical light-emitting diodes is used to strengthening the Auger recombination coefficient in comparison to lateral light-emitting diodes. This result has been found consistent in both single-as well as multi-quantum well structures. In addition, when Auger recombination coefficient has been included in the analysis, vertical multiquantum well structure shows more degradation in the IQE in comparison to the lateral structures. The effect has been dominant in vertical MQW case.http://dx.doi.org/10.1063/1.5010241
collection DOAJ
language English
format Article
sources DOAJ
author Muhammad Usman
Kiran Saba
Dong-Pyo Han
Nazeer Muhammad
Shabieh Farwa
Rafique Muhammad
Tanzila Saba
spellingShingle Muhammad Usman
Kiran Saba
Dong-Pyo Han
Nazeer Muhammad
Shabieh Farwa
Rafique Muhammad
Tanzila Saba
Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes
AIP Advances
author_facet Muhammad Usman
Kiran Saba
Dong-Pyo Han
Nazeer Muhammad
Shabieh Farwa
Rafique Muhammad
Tanzila Saba
author_sort Muhammad Usman
title Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes
title_short Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes
title_full Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes
title_fullStr Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes
title_full_unstemmed Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes
title_sort degradation effect of auger recombination and built-in polarization field on gan-based light-emitting diodes
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2018-01-01
description In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are presented. The degradation effect of the built-in polarization field on the IQE of vertical light-emitting diodes is used to strengthening the Auger recombination coefficient in comparison to lateral light-emitting diodes. This result has been found consistent in both single-as well as multi-quantum well structures. In addition, when Auger recombination coefficient has been included in the analysis, vertical multiquantum well structure shows more degradation in the IQE in comparison to the lateral structures. The effect has been dominant in vertical MQW case.
url http://dx.doi.org/10.1063/1.5010241
work_keys_str_mv AT muhammadusman degradationeffectofaugerrecombinationandbuiltinpolarizationfieldonganbasedlightemittingdiodes
AT kiransaba degradationeffectofaugerrecombinationandbuiltinpolarizationfieldonganbasedlightemittingdiodes
AT dongpyohan degradationeffectofaugerrecombinationandbuiltinpolarizationfieldonganbasedlightemittingdiodes
AT nazeermuhammad degradationeffectofaugerrecombinationandbuiltinpolarizationfieldonganbasedlightemittingdiodes
AT shabiehfarwa degradationeffectofaugerrecombinationandbuiltinpolarizationfieldonganbasedlightemittingdiodes
AT rafiquemuhammad degradationeffectofaugerrecombinationandbuiltinpolarizationfieldonganbasedlightemittingdiodes
AT tanzilasaba degradationeffectofaugerrecombinationandbuiltinpolarizationfieldonganbasedlightemittingdiodes
_version_ 1725356850758549504

Similar Items