Unified Analytical Model for SOI LDMOS With Electric Field Modulation

Unified Analytical Model for SOI LDMOS With Electric Field Modulation

The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time. The analytical solutions of the surface electric field distributions and potential distributions ar...

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Bibliographic Details
Main Authors: Baoxing Duan, Jingyu Xing, Ziming Dong, Yintang Yang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Analytical model
SOI LDMOS
electric field modulation effect
Poisson equation
surface electric field
Online Access:https://ieeexplore.ieee.org/document/9130705/

Internet

https://ieeexplore.ieee.org/document/9130705/

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