Phenomenological Model of Gate-Dependent Kink in I-V Characteristics of MoS<sub>2</sub> Double-Gate FETs
A phenomenological model, accounting for interface states at metal-semiconductor contacts, is proposed to explain particular gate-bias-dependent kinking in I-V characteristics sometimes observed in MoS<sub>2</sub> FETs. The effect is studied in double-gate FETs by varying top-gate voltag...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9404298/ |