High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application
InxGa1-xAs devices have been widely researched for low power high frequency applications due to the outstanding electron mobility and small bandgap of the materials. Regrown source/drain technology is highly appreciated in InGaAs MOSFET, since it is able to reduce the thermal budget induced by ion i...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2017-01-01
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| Series: | Journal of Sensors |
| Online Access: | http://dx.doi.org/10.1155/2017/4078240 |