Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C<sup>2+</sup> and 650 keV N<sup>2+</sup> ions in the fluence...

Full description

Bibliographic Details
Main Authors: Santosh Kumar, Xiang Zhang, Vinay Kumar Mariswamy, Varra Rajagopal Reddy, Asokan Kandasami, Arun Nimmala, S V S Nageswara Rao, Jue Tang, Seeram Ramakrishnna, Krishnaveni Sannathammegowda
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Materials
Subjects:
gan schottky diodes
mei irradiation
niel
let
electrical parameters
charge transport mechanism
surface morphology
optically active defects
Online Access:https://www.mdpi.com/1996-1944/13/6/1299

Internet

https://www.mdpi.com/1996-1944/13/6/1299

Similar Items