Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes
The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C<sup>2+</sup> and 650 keV N<sup>2+</sup> ions in the fluence...
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doaj-c7983e0fa361412b9220f9921e92b3502020-11-25T02:10:42ZengMDPI AGMaterials1996-19442020-03-01136129910.3390/ma13061299ma13061299Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier DiodesSantosh Kumar0Xiang Zhang1Vinay Kumar Mariswamy2Varra Rajagopal Reddy3Asokan Kandasami4Arun Nimmala5S V S Nageswara Rao6Jue Tang7Seeram Ramakrishnna8Krishnaveni Sannathammegowda9School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaSchool of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaDepartment of Physics, K.L.E Society’s R.L.S Institute, Belagavi 590001, IndiaDepartment of Physics, Sri Venkateswara University, Tirupati 517502, IndiaMaterial Science Group, Inter-University Accelerator Centre (IUAC), New Delhi 110067, IndiaCentre for Advanced Studies in Electronics Science and Technology (CASEST), School of Physics, University of Hyderabad, Hyderabad 500046, IndiaCentre for Advanced Studies in Electronics Science and Technology (CASEST), School of Physics, University of Hyderabad, Hyderabad 500046, IndiaBusiness School, Guilin University of Technology, Guilin 541004, Guangxi, ChinaDepartment of Mechanical Engineering, National University of Singapore, Singapore 117576, SingaporeDepartment of Studies in Physics, Manasagangotri, University of Mysore, Mysuru 570006, IndiaThe irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C<sup>2+</sup> and 650 keV N<sup>2+</sup> ions in the fluence range of 1 × 10<sup>13</sup> to 1 × 10<sup>15</sup> ions cm<sup>−2</sup>. The SRIM/TRIM simulations provide quantitative estimations of damage created along the trajectories of ion beams in the device profile. The electrical parameters like Schottky barrier height, series resistance of the Ni/Pd/n-GaN Schottky barrier diodes decreases for a fluence of 1 × 10<sup>13</sup> ions cm<sup>−2</sup> and thereafter increases with an increase in fluence of 600 keV C<sup>2+</sup> and 650 keV N<sup>2+</sup> ions. The charge transport mechanism is influenced by various current transport mechanisms along with thermionic emission. Photoluminescence studies have demonstrated the presence of yellow luminescence in the pristine samples. It disappears at higher fluences due to the possible occupancy of Ga vacancies. The presence of the green luminescence band may be attributed to the dislocation caused by the combination of gallium vacancy clusters and impurities due to MEI irradiation. Furthermore, X-ray diffraction studies reveal that there is a decrease in the intensity and shift in the diffraction peaks towards the lower side of two thetas. The reductions in the intensity of C<sup>2+</sup> ion irradiation is more when compared to N<sup>2+</sup> ion irradiation, which may be attributed to change in the mean atomic scattering factor on a given site for light C<sup>2+</sup> ion as compared to N<sup>2+</sup> ion.https://www.mdpi.com/1996-1944/13/6/1299gan schottky diodesmei irradiationnielletelectrical parameterscharge transport mechanismsurface morphologyoptically active defects |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Santosh Kumar Xiang Zhang Vinay Kumar Mariswamy Varra Rajagopal Reddy Asokan Kandasami Arun Nimmala S V S Nageswara Rao Jue Tang Seeram Ramakrishnna Krishnaveni Sannathammegowda |
spellingShingle |
Santosh Kumar Xiang Zhang Vinay Kumar Mariswamy Varra Rajagopal Reddy Asokan Kandasami Arun Nimmala S V S Nageswara Rao Jue Tang Seeram Ramakrishnna Krishnaveni Sannathammegowda Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes Materials gan schottky diodes mei irradiation niel let electrical parameters charge transport mechanism surface morphology optically active defects |
author_facet |
Santosh Kumar Xiang Zhang Vinay Kumar Mariswamy Varra Rajagopal Reddy Asokan Kandasami Arun Nimmala S V S Nageswara Rao Jue Tang Seeram Ramakrishnna Krishnaveni Sannathammegowda |
author_sort |
Santosh Kumar |
title |
Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes |
title_short |
Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes |
title_full |
Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes |
title_fullStr |
Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes |
title_full_unstemmed |
Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes |
title_sort |
medium energy carbon and nitrogen ion beam induced modifications in charge transport, structural and optical properties of ni/pd/n-gan schottky barrier diodes |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2020-03-01 |
description |
The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C<sup>2+</sup> and 650 keV N<sup>2+</sup> ions in the fluence range of 1 × 10<sup>13</sup> to 1 × 10<sup>15</sup> ions cm<sup>−2</sup>. The SRIM/TRIM simulations provide quantitative estimations of damage created along the trajectories of ion beams in the device profile. The electrical parameters like Schottky barrier height, series resistance of the Ni/Pd/n-GaN Schottky barrier diodes decreases for a fluence of 1 × 10<sup>13</sup> ions cm<sup>−2</sup> and thereafter increases with an increase in fluence of 600 keV C<sup>2+</sup> and 650 keV N<sup>2+</sup> ions. The charge transport mechanism is influenced by various current transport mechanisms along with thermionic emission. Photoluminescence studies have demonstrated the presence of yellow luminescence in the pristine samples. It disappears at higher fluences due to the possible occupancy of Ga vacancies. The presence of the green luminescence band may be attributed to the dislocation caused by the combination of gallium vacancy clusters and impurities due to MEI irradiation. Furthermore, X-ray diffraction studies reveal that there is a decrease in the intensity and shift in the diffraction peaks towards the lower side of two thetas. The reductions in the intensity of C<sup>2+</sup> ion irradiation is more when compared to N<sup>2+</sup> ion irradiation, which may be attributed to change in the mean atomic scattering factor on a given site for light C<sup>2+</sup> ion as compared to N<sup>2+</sup> ion. |
topic |
gan schottky diodes mei irradiation niel let electrical parameters charge transport mechanism surface morphology optically active defects |
url |
https://www.mdpi.com/1996-1944/13/6/1299 |
work_keys_str_mv |
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