Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes
The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C<sup>2+</sup> and 650 keV N<sup>2+</sup> ions in the fluence...
Main Authors: | Santosh Kumar, Xiang Zhang, Vinay Kumar Mariswamy, Varra Rajagopal Reddy, Asokan Kandasami, Arun Nimmala, S V S Nageswara Rao, Jue Tang, Seeram Ramakrishnna, Krishnaveni Sannathammegowda |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-03-01
|
Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/13/6/1299 |
Similar Items
-
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
by: Kai Fu, et al.
Published: (2020-01-01) -
Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes
by: H. MAZARI, et al.
Published: (2014-05-01) -
Schottky barrier diode fabrication on n-GaN for altraviolet detection
by: Diale, M. (Mmantsae Moche)
Published: (2013) -
Electrical Characterization of Ruthenium Dioxide Schottky Contacts on GaN
by: Allen, Noah P.
Published: (2017) -
Pt/GaN Schottky Diode for Propene (C3H6) Gas Sensing
by: M. SHAFIEI, et al.
Published: (2008-11-01)