Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing
We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer. By thermal annealing the P(VDF/TrFE) layer at temperatures above its melting point, we could si...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4935342 |