Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering
The Si-doped AlN films were grown on sapphire (0001) by pulsed sputtering deposition (PSD), and their structural and electrical properties were investigated. A combination of PSD and high-temperature annealing process enabled the growth of high-quality AlN (0001) epitaxial films on sapphire (0001) s...
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2018-11-01
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Online Access: | http://dx.doi.org/10.1063/1.5051555 |
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doaj-c7dfa1fb12d9430092c85e77c351d9362020-11-25T00:57:39ZengAIP Publishing LLCAPL Materials2166-532X2018-11-01611111103111103-610.1063/1.5051555004811APMGrowth of Si-doped AlN on sapphire (0001) via pulsed sputteringYuya Sakurai0Kohei Ueno1Atsushi Kobayashi2Jitsuo Ohta3Hideto Miyake4Hiroshi Fujioka5Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, JapanInstitute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, JapanInstitute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, JapanInstitute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, JapanDepartment of Electrical and Electronic Engineering, Mie University, Tsu 514-5507, JapanInstitute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, JapanThe Si-doped AlN films were grown on sapphire (0001) by pulsed sputtering deposition (PSD), and their structural and electrical properties were investigated. A combination of PSD and high-temperature annealing process enabled the growth of high-quality AlN (0001) epitaxial films on sapphire (0001) substrates with atomically flat stepped and terraced surfaces. The transmission electron microscopy observations revealed that the majority of the threading dislocations in AlN belonged to the mixed- or edge-type, with densities of 2.8 × 108 and 4.4 × 109 cm−2, respectively. The Si-doping of AlN by PSD yielded a clear n-type conductivity with a maximum electron mobility of 44 cm2 V−1 s−1, which was the highest value reported for AlN that was grown on sapphire. These results clearly demonstrated the strong potential of the PSD technique for growing high-quality conductive n-type AlN on sapphire.http://dx.doi.org/10.1063/1.5051555 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yuya Sakurai Kohei Ueno Atsushi Kobayashi Jitsuo Ohta Hideto Miyake Hiroshi Fujioka |
spellingShingle |
Yuya Sakurai Kohei Ueno Atsushi Kobayashi Jitsuo Ohta Hideto Miyake Hiroshi Fujioka Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering APL Materials |
author_facet |
Yuya Sakurai Kohei Ueno Atsushi Kobayashi Jitsuo Ohta Hideto Miyake Hiroshi Fujioka |
author_sort |
Yuya Sakurai |
title |
Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering |
title_short |
Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering |
title_full |
Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering |
title_fullStr |
Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering |
title_full_unstemmed |
Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering |
title_sort |
growth of si-doped aln on sapphire (0001) via pulsed sputtering |
publisher |
AIP Publishing LLC |
series |
APL Materials |
issn |
2166-532X |
publishDate |
2018-11-01 |
description |
The Si-doped AlN films were grown on sapphire (0001) by pulsed sputtering deposition (PSD), and their structural and electrical properties were investigated. A combination of PSD and high-temperature annealing process enabled the growth of high-quality AlN (0001) epitaxial films on sapphire (0001) substrates with atomically flat stepped and terraced surfaces. The transmission electron microscopy observations revealed that the majority of the threading dislocations in AlN belonged to the mixed- or edge-type, with densities of 2.8 × 108 and 4.4 × 109 cm−2, respectively. The Si-doping of AlN by PSD yielded a clear n-type conductivity with a maximum electron mobility of 44 cm2 V−1 s−1, which was the highest value reported for AlN that was grown on sapphire. These results clearly demonstrated the strong potential of the PSD technique for growing high-quality conductive n-type AlN on sapphire. |
url |
http://dx.doi.org/10.1063/1.5051555 |
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