Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering
The Si-doped AlN films were grown on sapphire (0001) by pulsed sputtering deposition (PSD), and their structural and electrical properties were investigated. A combination of PSD and high-temperature annealing process enabled the growth of high-quality AlN (0001) epitaxial films on sapphire (0001) s...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-11-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5051555 |