Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system

This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-...

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Bibliographic Details
Main Authors: A. Domdey, K. M. Hafkemeyer, W. H. Krautschneider, D. Schroeder
Format: Article
Language:deu
Published: Copernicus Publications 2008-05-01
Series:Advances in Radio Science
Online Access:http://www.adv-radio-sci.net/6/205/2008/ars-6-205-2008.pdf