p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process

p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process

An enhancement-mode high-electron-mobility transistor with a p-GaN gate was fabricated by using a chemistry-ease Cl<sub>2</sub>/N<sub>2</sub>/O<sub>2</sub>-based inductively coupled plasma etching technique. This etching technique features a precise etching self-t...

Full description

Bibliographic Details
Main Authors: Yu Zhou, Yaozong Zhong, Hongwei Gao, Shujun Dai, Junlei He, Meixin Feng, Yanfei Zhao, Qian Sun, An Dingsun, Hui Yang
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Enhancement-mode
HEMT
p-GaN gate
self-terminated etching
Online Access:https://ieeexplore.ieee.org/document/7973151/

Internet

https://ieeexplore.ieee.org/document/7973151/

Similar Items