Rapid Melt Growth of Single Crystal InGaAs on Si Substrates

InGaAs integration on Si substrates is an important topic for next generation electronic devices. Rapid melt growth (RMG) has the potential to grow defect-free lattice mismatched materials on Si at low cost. Most previous publications have focused on growing binary III–V compounds by RMG, but none h...

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Bibliographic Details
Main Authors: Xue Bai, Chien-Yu Chen, Niloy Mukherjee, Peter B. Griffin, James D. Plummer
Format: Article
Language:English
Published: Hindawi Limited 2016-01-01
Series:Advances in Materials Science and Engineering
Online Access:http://dx.doi.org/10.1155/2016/7139085