Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

Abstract Conductance method was employed to study the physics of traps (e.g., interface and bulk traps) in the Al2O3/GaN MOS devices. By featuring only one single peak in the parallel conductance (G p/ω) characteristics in the deep depletion region, one single-level bulk trap (E C-0.53 eV) uniformly...

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Bibliographic Details
Main Authors: Yuanyuan Shi, Qi Zhou, Anbang Zhang, Liyang Zhu, Yu Shi, Wanjun Chen, Zhaoji Li, Bo Zhang
Format: Article
Language:English
Published: SpringerOpen 2017-05-01
Series:Nanoscale Research Letters
Subjects:
Al2O3/GaN MOS channel device
Conductance method
Buffer traps
Interface traps
Online Access:http://link.springer.com/article/10.1186/s11671-017-2111-z

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http://link.springer.com/article/10.1186/s11671-017-2111-z

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