Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device
Abstract Conductance method was employed to study the physics of traps (e.g., interface and bulk traps) in the Al2O3/GaN MOS devices. By featuring only one single peak in the parallel conductance (G p/ω) characteristics in the deep depletion region, one single-level bulk trap (E C-0.53 eV) uniformly...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2017-05-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2111-z |