Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

Abstract Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been numerically investigated aiming to study their potentiality towards direct bandgap emission in the mid-IR range. The use of GeSiSn alloy as surrounding media for GeSn quantum dots (QD) allows adjusting the stra...

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Bibliographic Details
Main Authors: Reem Al-Saigh, Mourad Baira, Bassem Salem, Bouraoui Ilahi
Format: Article
Language:English
Published: SpringerOpen 2018-06-01
Series:Nanoscale Research Letters
Subjects:
GeSn
GeSiSn
Quantum dots
Direct bandgap
Mid-IR
Online Access:http://link.springer.com/article/10.1186/s11671-018-2587-1

Internet

http://link.springer.com/article/10.1186/s11671-018-2587-1

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