Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
Abstract Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been numerically investigated aiming to study their potentiality towards direct bandgap emission in the mid-IR range. The use of GeSiSn alloy as surrounding media for GeSn quantum dots (QD) allows adjusting the stra...
Main Authors: | Reem Al-Saigh, Mourad Baira, Bassem Salem, Bouraoui Ilahi |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2018-06-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-018-2587-1 |
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