Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Abstract Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers...

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Bibliographic Details
Main Authors: Qianqian Wang, Liemao Cao, Shi-Jun Liang, Weikang Wu, Guangzhao Wang, Ching Hua Lee, Wee Liat Ong, Hui Ying Yang, Lay Kee Ang, Shengyuan A. Yang, Yee Sin Ang
Format: Article
Language:English
Published: Nature Publishing Group 2021-08-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-021-00251-y

Internet

https://doi.org/10.1038/s41699-021-00251-y

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