High frequency and magnetoelectrical properties of magnetoresistive memory element based on FeCoNi/TiN/FeCoNi film
A miniaturised memory device for information recording and readout processes have been designed on the basis of anisotropic magnetoresistive effect in Fe15Co20Ni65(160Å)/ TiN(50Å)/Fe15Co20Ni65(160Å) three-layered film done by rf diode sputtering. Stable recording and readout processes were available...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2000-08-01
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Series: | Boletín de la Sociedad Española de Cerámica y Vidrio |
Subjects: | |
Online Access: | http://ceramicayvidrio.revistas.csic.es/index.php/ceramicayvidrio/article/view/824/852 |