High frequency and magnetoelectrical properties of magnetoresistive memory element based on FeCoNi/TiN/FeCoNi film

High frequency and magnetoelectrical properties of magnetoresistive memory element based on FeCoNi/TiN/FeCoNi film

A miniaturised memory device for information recording and readout processes have been designed on the basis of anisotropic magnetoresistive effect in Fe15Co20Ni65(160Å)/ TiN(50Å)/Fe15Co20Ni65(160Å) three-layered film done by rf diode sputtering. Stable recording and readout processes were available...

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Bibliographic Details
Main Authors: Kurlyandskaya, G. V., Barandiarán, J. M., García-Miquel, H., Vázquez, M., Vas’kovskiy, V. O., Svalov, A. V.
Format: Article
Language:English
Published: Elsevier 2000-08-01
Series:Boletín de la Sociedad Española de Cerámica y Vidrio
Subjects:
Thin film
magnetic memory
magnetoresistance
magnetoimpedance
Película delgada
memoria magnética
magnetorresistencia
magnetoimpedancia
Online Access:http://ceramicayvidrio.revistas.csic.es/index.php/ceramicayvidrio/article/view/824/852

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http://ceramicayvidrio.revistas.csic.es/index.php/ceramicayvidrio/article/view/824/852

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