GaN-based Matrix Converter Design with Output Filters for Motor Friendly Drive System

This paper introduces a gallium nitride (GaN) high electron mobility transistor (HEMT)-based matrix converter for motor friendly drive systems. A fast switching characteristic of the GaN devices causes high dv/dt. This increases the importance of noise immunity and the reduction of parasitic compone...

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Bibliographic Details
Main Authors: Hanyoung Bu, Younghoon Cho
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Energies
Subjects:
Online Access:https://www.mdpi.com/1996-1073/13/4/971