GaN-based Matrix Converter Design with Output Filters for Motor Friendly Drive System

• Main Authors: Hanyoung Bu, Younghoon Cho
• Format: Article
• Language: English
• Published: MDPI AG 2020-02-01
• Series: Energies
• Subjects: dv/dt; gan hemt; gate driver; parasitic inductance; matrix converter; dv/dt filter; sine-wave filter; leakage current
• Online Access: https://www.mdpi.com/1996-1073/13/4/971

This paper introduces a gallium nitride (GaN) high electron mobility transistor (HEMT)-based matrix converter for motor friendly drive systems. A fast switching characteristic of the GaN devices causes high dv/dt. This increases the importance of noise immunity and the reduction of parasitic components in system design. In addition, the high dv/dt in motor drive systems leads to voltage spike at a motor input terminal and leakage current through a motor chassis. Accordingly, a gate drive circuit consists of devices with a high common mode transient immunity. A printed circuit board was designed to minimize parasitic inductance, which was analyzed by performing simulations. To mitigate the dv/dt of the voltage applied to the motor and the leakage current, a dv/dt filter and a sine-wave filter were utilized as an output filter of the matrix converter. The effectiveness of each filter was verified by driving an induction motor.