Enhancement of Responsivity in Solar-Blind UV Detector With Back-Gate MOS Structure Fabricated on β-Ga2O3 Films
Monoclinic Ga2O3 (β-Ga2O3) films were grown on Si/SiO2 by using MOCVD. Then, we fabricated the solar-blind photodetector with a back-gate MOS structure. The device exhibited obvious photoresponse under 254-nm UV light illumination, and the photocurrent increased by five orders of magnitude, which co...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2021-06-01
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| Series: | Frontiers in Materials |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2021.672128/full |