Annealing-induced change in quantum dot chain formation mechanism
Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4905053 |