Investigation of Surface Morphology of 6H-SiC Irradiated with He+ and H2+ Ions

Light ion implantation is one of the important procedures of smart cut for SiC-based semiconductor fabrication. This work investigated the surface morphologies and microstructures of single crystal 6H-SiC irradiated by one or both of H2+ and He+ ions at room temperature and then annealed at specific...

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Bibliographic Details
Main Authors: Qiang Shen, Guang Ran, Wei Zhou, Chao Ye, Qijie Feng, Ning Li
Format: Article
Language:English
Published: MDPI AG 2018-02-01
Series:Materials
Subjects:
SiC
Online Access:http://www.mdpi.com/1996-1944/11/2/282