Investigation of Surface Morphology of 6H-SiC Irradiated with He+ and H2+ Ions
Light ion implantation is one of the important procedures of smart cut for SiC-based semiconductor fabrication. This work investigated the surface morphologies and microstructures of single crystal 6H-SiC irradiated by one or both of H2+ and He+ ions at room temperature and then annealed at specific...
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-02-01
|
Series: | Materials |
Subjects: | |
Online Access: | http://www.mdpi.com/1996-1944/11/2/282 |
id |
doaj-c934fd64f0d54234bd69ed5a984d2d7f |
---|---|
record_format |
Article |
spelling |
doaj-c934fd64f0d54234bd69ed5a984d2d7f2020-11-24T21:28:19ZengMDPI AGMaterials1996-19442018-02-0111228210.3390/ma11020282ma11020282Investigation of Surface Morphology of 6H-SiC Irradiated with He+ and H2+ IonsQiang Shen0Guang Ran1Wei Zhou2Chao Ye3Qijie Feng4Ning Li5College of Energy, Xiamen University, Xiamen 361102, ChinaCollege of Energy, Xiamen University, Xiamen 361102, ChinaChina Academy of Engineering Physics, Mianyang 621900, ChinaCollege of Energy, Xiamen University, Xiamen 361102, ChinaChina Academy of Engineering Physics, Mianyang 621900, ChinaCollege of Energy, Xiamen University, Xiamen 361102, ChinaLight ion implantation is one of the important procedures of smart cut for SiC-based semiconductor fabrication. This work investigated the surface morphologies and microstructures of single crystal 6H-SiC irradiated by one or both of H2+ and He+ ions at room temperature and then annealed at specific temperatures. Blisters evolved from the coalescence of H nanocracks were formed in the H2+ and He++H2+ irradiated sample surface, while circular ripples originated from the pressure release of helium bubbles after high temperature annealing were formed in the He+ irradiated sample surface. The lateral radius a of the blisters in the irradiated sample with low H2+ fluence was larger than that in the irradiated sample with high H2+ fluence and with He++H2+ ions. About 8–58% of implanted H atoms contributed to the formation of the blisters. Compared with other irradiated samples, the ratio of w0/a and the density of the blisters in the He++H2+ irradiated samples were largest. The stress field of the blisters was simulated using finite element method and the inner pressure in the blisters was also calculated. The corresponding mechanism was analyzed and discussed.http://www.mdpi.com/1996-1944/11/2/282SiCsurface morphologyirradiationblister |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Qiang Shen Guang Ran Wei Zhou Chao Ye Qijie Feng Ning Li |
spellingShingle |
Qiang Shen Guang Ran Wei Zhou Chao Ye Qijie Feng Ning Li Investigation of Surface Morphology of 6H-SiC Irradiated with He+ and H2+ Ions Materials SiC surface morphology irradiation blister |
author_facet |
Qiang Shen Guang Ran Wei Zhou Chao Ye Qijie Feng Ning Li |
author_sort |
Qiang Shen |
title |
Investigation of Surface Morphology of 6H-SiC Irradiated with He+ and H2+ Ions |
title_short |
Investigation of Surface Morphology of 6H-SiC Irradiated with He+ and H2+ Ions |
title_full |
Investigation of Surface Morphology of 6H-SiC Irradiated with He+ and H2+ Ions |
title_fullStr |
Investigation of Surface Morphology of 6H-SiC Irradiated with He+ and H2+ Ions |
title_full_unstemmed |
Investigation of Surface Morphology of 6H-SiC Irradiated with He+ and H2+ Ions |
title_sort |
investigation of surface morphology of 6h-sic irradiated with he+ and h2+ ions |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2018-02-01 |
description |
Light ion implantation is one of the important procedures of smart cut for SiC-based semiconductor fabrication. This work investigated the surface morphologies and microstructures of single crystal 6H-SiC irradiated by one or both of H2+ and He+ ions at room temperature and then annealed at specific temperatures. Blisters evolved from the coalescence of H nanocracks were formed in the H2+ and He++H2+ irradiated sample surface, while circular ripples originated from the pressure release of helium bubbles after high temperature annealing were formed in the He+ irradiated sample surface. The lateral radius a of the blisters in the irradiated sample with low H2+ fluence was larger than that in the irradiated sample with high H2+ fluence and with He++H2+ ions. About 8–58% of implanted H atoms contributed to the formation of the blisters. Compared with other irradiated samples, the ratio of w0/a and the density of the blisters in the He++H2+ irradiated samples were largest. The stress field of the blisters was simulated using finite element method and the inner pressure in the blisters was also calculated. The corresponding mechanism was analyzed and discussed. |
topic |
SiC surface morphology irradiation blister |
url |
http://www.mdpi.com/1996-1944/11/2/282 |
work_keys_str_mv |
AT qiangshen investigationofsurfacemorphologyof6hsicirradiatedwithheandh2ions AT guangran investigationofsurfacemorphologyof6hsicirradiatedwithheandh2ions AT weizhou investigationofsurfacemorphologyof6hsicirradiatedwithheandh2ions AT chaoye investigationofsurfacemorphologyof6hsicirradiatedwithheandh2ions AT qijiefeng investigationofsurfacemorphologyof6hsicirradiatedwithheandh2ions AT ningli investigationofsurfacemorphologyof6hsicirradiatedwithheandh2ions |
_version_ |
1725971158962012160 |