Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice
A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the photodetector exhibits a peak responsivity of 1.48 A/W, corresponding to a quantum efficiency of 47% at −50 mV applied bias un...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5136501 |