Interstitial oxygen induced Fermi level pinning in the Al2O3-based high-k MISFET with heavy-doped n-type poly-Si gates
We study the origin of substantial threshold voltage (Vth) shifts observed in Al2O3-based MISFETs with n+poly-Si gate, by focusing on the effect of an interstitial oxygen (Oi) formation in Al2O3. We observed that the Oi level in Al2O3 is 1 eV above the valence band top of Al2O3 by first-principles c...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4825071 |