The impact transconductance parameter and threshold voltage of MOSFET’s in static characteristics of CMOS inverter

The impact transconductance parameter and threshold voltage of MOSFET’s in static characteristics of CMOS inverter

The objective of this paper is to research the impact of electrical and physical parameters that characterize the complementary MOSFET transistors (NMOS and PMOS transistors) in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directives that...

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Bibliographic Details
Main Authors: Milaim Zabeli, Nebi Caka, Myzafere Limani, Qamil Kabashi
Format: Article
Language:English
Published: Natural and Engineering Sciences 2017-11-01
Series:Natural and Engineering Sciences
Subjects:
CMOS inverter
threshold voltage
voltage critical value
noise margins
transconductance parameter
Online Access:http://www.nesciences.com/download.php?id=230

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http://www.nesciences.com/download.php?id=230

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