Compact Modeling and Analysis of Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction

Compact Modeling and Analysis of Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction

Recently, experimental results have demonstrated that perpendicular magnetic tunnel junction (p-MTJ) with the antiferromagnetic(AFM)/ferromagnetic (FM)/oxide structure can achieve field-free spin-orbit torque (SOT) switching since the AFM metal strip can not only generate the SOT, but also provide a...

Full description

Bibliographic Details
Main Authors: Kaili Zhang, Deming Zhang, Chengzhi Wang, Lang Zeng, You Wang, Weisheng Zhao
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
p-MTJ
antiferromagnetic
field-free SOT switching
exchange bias
VCMA
voltage-gated SOT
Online Access:https://ieeexplore.ieee.org/document/9032097/

Internet

https://ieeexplore.ieee.org/document/9032097/

Similar Items