Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire

Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire

The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention fro...

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Bibliographic Details
Main Authors: Peng Zhao, Yu Zhang, Shuai Tang, Runze Zhan, Juncong She, Jun Chen, Ningsheng Xu, Shaozhi Deng
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Nanomaterials
Subjects:
silicon carbide nanowire
piezoresistive effect
electronic transport
in situ electric measurement
pulse-voltage driving
electron emission
Online Access:https://www.mdpi.com/2079-4991/9/7/981

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https://www.mdpi.com/2079-4991/9/7/981

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