Effect of quantum barrier width and quantum resonant tunneling through InGaN/GaN parabolic quantum well-LED structure on LED efficiency
The effect of quantum barrier width and electric field on the resonant tunneling through the double barrier In0.2Ga0.8N/GaN parabolic-quantum well light-emitting diode (LED) structure and LED efficiency was investigated analytically. LEDs are based on resonant tunneling diode (RTD) quantum well (QW)...
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| Format: | Article |
| Language: | English |
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Elsevier
2021-03-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379721001170 |