Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

In this study, silicon nitride (SiN<sub>x</sub>) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparat...

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Bibliographic Details
Main Authors: Hong-Ping Ma, Hong-Liang Lu, Jia-He Yang, Xiao-Xi Li, Tao Wang, Wei Huang, Guang-Jie Yuan, Fadei F. Komarov, David Wei Zhang
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Nanomaterials
Subjects:
silicon nitride
silicon oxynitride
plasma enhanced atomic layer deposition
oxygen contamination
optical properties
Online Access:https://www.mdpi.com/2079-4991/8/12/1008

Internet

https://www.mdpi.com/2079-4991/8/12/1008

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