Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition
In this study, silicon nitride (SiN<sub>x</sub>) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparat...
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MDPI AG
2018-12-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/8/12/1008 |
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doaj-ca3095577a0e4287a03864ce0f4e5f9d2020-11-25T00:13:13ZengMDPI AGNanomaterials2079-49912018-12-01812100810.3390/nano8121008nano8121008Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer DepositionHong-Ping Ma0Hong-Liang Lu1Jia-He Yang2Xiao-Xi Li3Tao Wang4Wei Huang5Guang-Jie Yuan6Fadei F. Komarov7David Wei Zhang8State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaSMIT Center, School of Automation and Mechanical Engineering, Shanghai University, Shanghai 201800, ChinaA.N. Sevchenko Institute of Applied Physical Problems, Belarusian State University, 220045 Minsk, BelarusState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaIn this study, silicon nitride (SiN<sub>x</sub>) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparatively studied and various valuable results are obtained. In detail, x-ray reflectivity, x-ray photoelectron spectroscopy, atomic force microscopy, and spectroscopic ellipsometry are used to systematically characterize the microstructural, optical, and electrical properties of SiON film. The experimental results indicate that the surface roughness increases from 0.13 to 0.2 nm as the oxygen concentration decreases. The refractive index of the SiON film reveals an increase from 1.55 to 1.86 with decreasing oxygen concentration. Accordingly, the band-gap energy of these films determined by oxygen 1s-peak analysis decreases from 6.2 to 4.8 eV. Moreover, the I-V tests demonstrate that the film exhibits lower leakage current and better insulation for higher oxygen concentration in film. These results indicate that oxygen affects microstructural, optical, and electrical properties of the prepared SiN<sub>x</sub> film.https://www.mdpi.com/2079-4991/8/12/1008silicon nitridesilicon oxynitrideplasma enhanced atomic layer depositionoxygen contaminationoptical properties |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Hong-Ping Ma Hong-Liang Lu Jia-He Yang Xiao-Xi Li Tao Wang Wei Huang Guang-Jie Yuan Fadei F. Komarov David Wei Zhang |
| spellingShingle |
Hong-Ping Ma Hong-Liang Lu Jia-He Yang Xiao-Xi Li Tao Wang Wei Huang Guang-Jie Yuan Fadei F. Komarov David Wei Zhang Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition Nanomaterials silicon nitride silicon oxynitride plasma enhanced atomic layer deposition oxygen contamination optical properties |
| author_facet |
Hong-Ping Ma Hong-Liang Lu Jia-He Yang Xiao-Xi Li Tao Wang Wei Huang Guang-Jie Yuan Fadei F. Komarov David Wei Zhang |
| author_sort |
Hong-Ping Ma |
| title |
Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| title_short |
Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| title_full |
Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| title_fullStr |
Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| title_full_unstemmed |
Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| title_sort |
measurements of microstructural, chemical, optical, and electrical properties of silicon-oxygen-nitrogen films prepared by plasma-enhanced atomic layer deposition |
| publisher |
MDPI AG |
| series |
Nanomaterials |
| issn |
2079-4991 |
| publishDate |
2018-12-01 |
| description |
In this study, silicon nitride (SiN<sub>x</sub>) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparatively studied and various valuable results are obtained. In detail, x-ray reflectivity, x-ray photoelectron spectroscopy, atomic force microscopy, and spectroscopic ellipsometry are used to systematically characterize the microstructural, optical, and electrical properties of SiON film. The experimental results indicate that the surface roughness increases from 0.13 to 0.2 nm as the oxygen concentration decreases. The refractive index of the SiON film reveals an increase from 1.55 to 1.86 with decreasing oxygen concentration. Accordingly, the band-gap energy of these films determined by oxygen 1s-peak analysis decreases from 6.2 to 4.8 eV. Moreover, the I-V tests demonstrate that the film exhibits lower leakage current and better insulation for higher oxygen concentration in film. These results indicate that oxygen affects microstructural, optical, and electrical properties of the prepared SiN<sub>x</sub> film. |
| topic |
silicon nitride silicon oxynitride plasma enhanced atomic layer deposition oxygen contamination optical properties |
| url |
https://www.mdpi.com/2079-4991/8/12/1008 |
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