INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS

INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS

The results of experimental researches of influence of gamma radiation Со60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted.

Bibliographic Details
Main Authors: Yu. V. Bogatyrev, S. B. Lastovsky, S. A. Soroka, S. V. Shwedov, D. A. Ogorodnikov
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
mos/soi transistor
gamma radiation
radiation resistance
Online Access:https://doklady.bsuir.by/jour/article/view/653

Internet

https://doklady.bsuir.by/jour/article/view/653

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