INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS

The results of experimental researches of influence of gamma radiation Со60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted.

Bibliographic Details
Main Authors:	Yu. V. Bogatyrev, S. B. Lastovsky, S. A. Soroka, S. V. Shwedov, D. A. Ogorodnikov
Format:	Article
Language:	Russian
Published:	Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:	Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:	mos/soi transistor gamma radiation radiation resistance
Online Access:	https://doklady.bsuir.by/jour/article/view/653

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spelling	doaj-ca4ebfbaf3734677afa75e19dbc2f1ec2021-07-28T16:19:52ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01037580652INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORSYu. V. Bogatyrev0S. B. Lastovsky1S. A. Soroka2S. V. Shwedov3D. A. Ogorodnikov4Научно-практический центр НАН Беларуси по материаловедениюНаучно-практический центр НАН Беларуси по материаловедениюНТЦ «Белмикросистемы» ОАО «Интеграл»НТЦ «Белмикросистемы» ОАО «Интеграл»Научно-практический центр НАН Беларуси по материаловедениюThe results of experimental researches of influence of gamma radiation Со60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted.https://doklady.bsuir.by/jour/article/view/653mos/soi transistorgamma radiationradiation resistance
collection	DOAJ
language	Russian
format	Article
sources	DOAJ
author	Yu. V. Bogatyrev S. B. Lastovsky S. A. Soroka S. V. Shwedov D. A. Ogorodnikov
spellingShingle	Yu. V. Bogatyrev S. B. Lastovsky S. A. Soroka S. V. Shwedov D. A. Ogorodnikov INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki mos/soi transistor gamma radiation radiation resistance
author_facet	Yu. V. Bogatyrev S. B. Lastovsky S. A. Soroka S. V. Shwedov D. A. Ogorodnikov
author_sort	Yu. V. Bogatyrev
title	INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS
title_short	INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS
title_full	INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS
title_fullStr	INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS
title_full_unstemmed	INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS
title_sort	influence of gamma radiation on mos/soi transistors
publisher	Educational institution «Belarusian State University of Informatics and Radioelectronics»
series	Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
issn	1729-7648
publishDate	2019-06-01
description	The results of experimental researches of influence of gamma radiation Со60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted.
topic	mos/soi transistor gamma radiation radiation resistance
url	https://doklady.bsuir.by/jour/article/view/653
work_keys_str_mv	AT yuvbogatyrev influenceofgammaradiationonmossoitransistors AT sblastovsky influenceofgammaradiationonmossoitransistors AT sasoroka influenceofgammaradiationonmossoitransistors AT svshwedov influenceofgammaradiationonmossoitransistors AT daogorodnikov influenceofgammaradiationonmossoitransistors
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INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS

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