Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications
Abstract AlN films were deposited on Si substrates using a reactive RF magnetron sputtering process and then the films were annealed by using different laser powers and wavelengths (355 nm, 532 nm and 1064 nm). For all three laser systems, the (002) peak intensity was obviously improved following la...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
BMC
2019-03-01
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| Series: | BMC Chemistry |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s13065-019-0550-6 |