Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs
We employ a circular (Corbino) thin-film transistor (TFT) structure, in which the outer-ring is the drain and the inner-ring is the source, to improve the stability of amorphous-indium-gallium- zinc-oxide TFTs under tensile bending strain. We attribute the stability improvement to a more uniform ele...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8036177/ |