Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current tran...

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Bibliographic Details
Main Authors: H. MAZARI, K. AMEUR, N. BENSEDDIK, Z. BENAMARA, R. KHELIFI, M. MOSTEFAOUI, N. ZOUGAGH, N. BENYAHYA, R. BECHAREF, G. BASSOU, B. GRUZZA, J. M. BLUET, C. BRU-CHEVALLIER
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2014-05-01
Series:Sensors & Transducers
Subjects:
GaN
Electrical Characterization
Modeling
Schottky Diode.
Online Access:http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_510.pdf

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http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_510.pdf

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