Ferroionic inversion of spin polarization in a spin-memristor

Ferroionic inversion of spin polarization in a spin-memristor

Magnetoelectric coupling in artificial multiferroic interfaces can be drastically affected by the switching of oxygen vacancies and by the inversion of the ferroelectric polarization. Disentangling both effects is of major importance toward exploiting these effects in practical spintronic or spinorb...

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Bibliographic Details
Main Authors: V. Rouco, F. Gallego, D. Hernandez-Martin, D. Sanchez-Manzano, J. Tornos, J. I. Beltran, M. Cabero, F. Cuellar, D. Arias, G. Sanchez-Santolino, F. J. Mompean, M. Garcia-Hernandez, A. Rivera-Calzada, M. Varela, M. C. Muñoz, C. Leon, Z. Sefrioui, J. Santamaria
Format: Article
Language:English
Published: AIP Publishing LLC 2021-03-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0039030

Internet

http://dx.doi.org/10.1063/5.0039030

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