Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies

Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies

For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V m...

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Bibliographic Details
Main Authors: Ahid S. Hajo, Oktay Yilmazoglu, Armin Dadgar, Franko Kuppers, Thomas Kusserow
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Gallium nitride
gunn diodes
semiconductor structure
terahertz source
side-contact
field-plate
Online Access:https://ieeexplore.ieee.org/document/9081902/

Internet

https://ieeexplore.ieee.org/document/9081902/

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