Correlation between Electron Mobility and Static Dielectric Permittivity of n-InSb
Direct analytical calculations of the static dielectric permittivity-dependent electron mobility due to different elastic scattering mechanisms for n-type InSb were carried out. The calculated static dielectric permittivity increases by increasing of donor concentration. The temperature dependence o...
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| Format: | Article |
| Language: | English |
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De Gruyter
2015-11-01
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| Series: | Open Physics |
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| Online Access: | http://www.degruyter.com/view/j/phys.2015.13.issue-1/phys-2015-0039/phys-2015-0039.xml?format=INT |