First Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS

First Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS

In this paper, the authors report a unique short circuit failure mechanism of a 1.2 kV silicon carbide (SiC) SBD-wall-integrated trench MOSFET (SWITCH-MOS), using numerical simulations and experimental validation. When the Schottky barrier height in the SWITCH-MOS was set at 1.20 eV, the short-circu...

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Bibliographic Details
Main Authors: Masataka Okawa, Ruito Aiba, Taiga Kanamori, Yusuke Kobayashi, Shinsuke Harada, Hiroshi Yano, Noriyuki Iwamuro
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Silicon carbide
SWITCH-MOS
short-circuit capability
thermionic-field emission
Schottky barrier height
Online Access:https://ieeexplore.ieee.org/document/8717671/

Internet

https://ieeexplore.ieee.org/document/8717671/

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