First Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS
In this paper, the authors report a unique short circuit failure mechanism of a 1.2 kV silicon carbide (SiC) SBD-wall-integrated trench MOSFET (SWITCH-MOS), using numerical simulations and experimental validation. When the Schottky barrier height in the SWITCH-MOS was set at 1.20 eV, the short-circu...
Main Authors: | Masataka Okawa, Ruito Aiba, Taiga Kanamori, Yusuke Kobayashi, Shinsuke Harada, Hiroshi Yano, Noriyuki Iwamuro |
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Format: | Article |
Language: | English |
Published: |
IEEE
2019-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8717671/ |
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