3D GaN nanoarchitecture for field-effect transistors
The three-dimensionality of 3D GaN field-effect transistors (FETs) provides them with unique advantages compared to their planar counterparts, introducing a promising path towards future FETs beyond Moore's law. Similar to today's Si processor technology, 3D GaN FETs offer multi-gate struc...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019-05-01
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| Series: | Micro and Nano Engineering |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S259000721930019X |